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25RIA20M Datasheet(PDF) 3 Page - International Rectifier |
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25RIA20M Datasheet(HTML) 3 Page - International Rectifier |
3 / 9 page 25RIA Series 3 www.irf.com Bulletin I2402 rev. A 07/00 dv/dt Max. critical rate of rise of 100 TJ = TJ max. linear to 100% rated VDRM off-state voltage 300 (*) TJ = TJ max. linear to 67% rated VDRM V/µs Parameter 25RIA Units Conditions Blocking P GM Maximum peak gate power 8.0 T J = TJ max. P G(AV) Maximum average gate power 2.0 I GM Max. peak positive gate current 1.5 A T J = TJ max. -V GM Maximum peak negative 10 V T J = TJ max. gate voltage I GT DC gate current required 90 T J = - 65°C to trigger 60 mA T J = 25°C 35 T J = 125°C V GT DC gate voltage required 3.0 T J = - 65°C to trigger 2.0 V T J = 25°C 1.0 V T J = 125°C I GD DC gate current not to trigger 2.0 mA T J = TJ max., VDRM = rated value V GD DC gate voltage not to trigger 0.2 V T J = TJ max. V DRM = rated value W Max. required gate trigger current/ voltage are the lowest value which will trigger all units 6V anode-to- cathode applied Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated V DRM anode-to-cathode applied Parameter 25RIA Units Conditions Triggering di/dt Max. rate of rise of turned-on T J = TJ max., VDM = rated VDRM current VDRM ≤ 600V 200 A/µs Gate pulse = 20V, 15 Ω, t p = 6µs, tr = 0.1µs max. VDRM ≤ 800V 180 I TM = (2x rated di/dt) A VDRM ≤ 1000V 160 VDRM ≤ 1600V 150 tgt Typical turn-on time 0.9 T J = 25°C, at = rated V DRM/VRRM, TJ = 125°C trr Typical reverse recovery time 4 µs T J = TJ max., I TM = IT(AV), t p > 200µs, di/dt = -10A/µs tq Typical turn-off time 110 T J = TJ max., ITM = IT(AV), t p > 200µs, VR = 100V, di/dt = -10A/µs, dv/dt = 20V/µs linear to 67% V DRM, gate bias 0V-100W Parameter 25RIA Units Conditions Switching (**) Available with: dv/dt = 1000V/µs, to complete code add S90 i.e. 25RIA160S90. (*) tq = 10µsup to 600V, tq = 30µs up to 1600V available on special request. |
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