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WFF8N60B Datasheet(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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WFF8N60B Datasheet(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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2 / 8 page  www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299 2/8 WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS WFF8N60B Product Description Silicon Silicon Silicon Silicon N-Channel N-Channel N-Channel N-Channel MOSFET MOSFET MOSFET MOSFET Silicon Silicon Silicon Silicon N-Channel N-Channel N-Channel N-Channel MOSFET MOSFET MOSFET MOSFET Electrical Characteristics(Tc=25℃) Characteristics Symbol Test Condition Min Type Max Unit Gate leakage current IGSS VGS=±30V,VDS=0V - - ±100 nA Gate-source breakdown voltage V(BR)GSS IG=±10 µA,VDS=0V ±30 - - V Drain cut -off current IDSS VDS=600V,VGS=0V - - 10 µA VDS=480V,Tc=125℃ - - 100 µA Drain -source breakdown voltage V(BR)DSS ID=250 µA,VGS=0V 600 - - V Breakdown Voltage temperature Coefficient ∆BVDSS/∆TJ ID=250 µA,Referenced to 25℃ - 0.65 - V/℃ Gate threshold voltage VGS(th) VDS=VGS,ID=250 µA 2 - 4 V Drain -source ON resistance RDS(ON) VGS=10V,ID=3.75A - 1.0 1.2 Ω Forward Transconductance gfs VDS=40V,ID=3.75A - 6.2 - S Input capacitance Ciss VDS=25V, VGS=0V, f=1MHz - 1120 1350 pF Reverse transfer capacitance Crss - 23 30 Output capacitance Coss - 115 150 Switching time Turn-on Rise time tr VDD=300V, ID=7.5A RG=25Ω (Note4,5) - 80 170 ns Turn-on delay time td(on) - 30 70 Turn-off Fall time tf - 60 110 Turn-off delay time td(off) - 125 260 Total gate charge(gate-source plus gate-drain) Qg VDD=480V, VGS=10V, ID=7.5A (Note4,5) - 25 35 nC Gate-source charge Qgs - 6 - Gate-drain("miller") Charge Qgd - 10 - Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 7.5 A Pulse drain reverse current IDRP - - - 30 A Forward voltage(diode) VDSF IDR=7.5A,VGS=0V - - 1.4 V Reverse recovery time trr IDR=7.5A,VGS=0V, dIDR / dt =100 A / µs - 315 - ns Reverse recovery charge Qrr - 2.6 - µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=19.5mH IAS=7.5A,VDD=50V,RG=25Ω,Starting TJ=25℃ 3.ISD≤7.5A,di/dt≤300A/us,VDD<BVDSS,Starting TJ=25℃ 4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2% 5. Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution |
Similar Part No. - WFF8N60B_13 |
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Similar Description - WFF8N60B_13 |
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