© Semiconductor Components Industries, LLC, 2016

February, 2016 − Rev. 7

1

Publication Order Number:

MBR1100/D

MBR1100

Axial Lead Rectifier

These rectifiers employ the Schottky Barrier principle in a large area

metal−to−silicon power diode. State−of−the−art geometry features

epitaxial construction with oxide passivation and metal overlap

contact. Ideally suited for use as rectifiers in low−voltage,

high−frequency inverters, free wheeling diodes, and polarity

protection diodes.

Features

Mechanical Characteristics:

Leads are Readily Solderable

260

°C Max. for 10 Seconds

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

100

V

Average Rectified Forward Current

1.0

A

Peak Repetitive Forward Current

2.0

A

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions

Halfwave, Single Phase, 60 Hz)

50

A

Operating and Storage Junction Temperature

Range (Note 1)

−65 to

+175

°C

dv/dt

10

V/ns

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. The heat generated must be less than the thermal conductivity from

Device

Package

ORDERING INFORMATION

SCHOTTKY

BARRIER RECTIFIER

1.0 AMPERE, 100 VOLTS

MBR1100G

Axial Lead

(Pb−Free)

1000 Units/Bag

www.onsemi.com

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

MBR1100RLG

Axial Lead

(Pb−Free)

5000/Tape & Reel

DO−41

AXIAL LEAD

CASE 59

STYLE 1

MARKING DIAGRAM

A

= Assembly Location

Y

= Year

WW = Work Week

G

= Pb−Free Package

(Note: Microdot may be in either location)

A

MBR1100

YYWW

G

G