MBR60L45CTG_15 datasheet(2/6 Pages) ONSEMI

Part #	MBR60L45CTG

Description	Switch?릑ode Power Rectifier

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Manufacturer	ONSEMI [ON Semiconductor]

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MBR60L45CTG, MBR60L45WTG

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MAXIMUM RATINGS (Per Diode Leg)

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

45

V

Average Rectified Forward Current

(Rated VR) TC = 145°C for MBR60L45CTG

(Rated VR) TC = 165°C for MBR60L45WTG

IF(AV)

30

A

Peak Repetitive Forward Current

(Rated VR, Square Wave, 20 kHz)

IFRM

60

A

Nonrepetitive Peak Surge Current

(Surge applied at rated load conditions halfwave, single phase, 60 Hz)

IFSM

200

A

Operating Junction Temperature (Note 1)

TJ

−65 to +175

°C

Storage Temperature

Tstg

−65 to +175

°C

Voltage Rate of Change (Rated VR)

dv/dt

10,000

V/

ms

ESD Ratings:

Machine Model = C

Human Body Model = 3B

> 400

> 8000

V

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Maximum Thermal Resistance

(MBR60L45CTG)

− Junction−to−Case

(MBR60L45WTG)

− Junction−to−Case

RqJC

1.9

0.59

°C/W

ELECTRICAL CHARACTERISTICS (Per Diode Leg)

Characteristic

Symbol

Value

Unit

Maximum Instantaneous Forward Voltage (Note 2)

(IF = 30 A, TC = 25°C)

(IF = 30 A, TC = 125°C)

(IF = 60 A, TC = 25°C)

(IF = 60 A, TC = 125°C)

vF

0.55

0.53

0.73

0.76

V

Maximum Instantaneous Reverse Current (Note 2)

(Rated DC Voltage, TC = 25°C)

(Rated DC Voltage, TC = 125°C)

iR

1.2

275

mA

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: Pulse Width = 300

ms, Duty Cycle ≤ 2.0%.

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MBR60L45CTG Datasheet(PDF) 2 Page - ON Semiconductor

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