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D2304G Datasheet(PDF) 4 Page - Micro Electronics |
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D2304G Datasheet(HTML) 4 Page - Micro Electronics |
4 / 8 page 4 Lucent Technologies Inc. Data Sheet February 2000 Isolated DFB Laser Module 1.3 µm D2300-Type Digital Characteristics Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information purposes only and are not part of the test- ing requirements. * Standard operating condition is 5.0 V reverse bias. † Ratio of thermistor resistance at 0 °C to thermistor resistance at 50 °C. Table 1. Electrical Characteristics (at 25 °C Laser Temperature) Parameter Symbol Test Conditions Min Typ Max Unit Laser Forward Voltage VLF LF = 2 mW (CW) — 1.3 1.8 V Slope Efficiency η LF = 2 mW (CW) 0.025 0.06 — mW/mA Threshold Current ITH — — 15 50 mA Monitor Reverse-bias Voltage* VRMON —3 5 10 V Monitor Current IRMON PO = 1 mW (CW) 0.1 1.0 2.0 mA Monitor Dark Current ID IF = 0, VRMON = 5 V — 0.01 0.1 µA Input Impedance ZIN — — 25 — Ω Thermistor Current ITC — 10 — 100 µA Resistance Ratio† — — 8.6 — 9.6 — Thermistor Resistance RTH TL = 25 °C 9.5 — 10.5 k Ω TEC Current ITEC TL = 25 °C, TC = 70 °C — — 1.0 A TEC Voltage VTEC TL = 25 °C, TC = 70 °C — — 2.0 V TEC Capacity ∆TTC = 80 °C55 — — °C Table 2. Optical Characteristics (at 25 °C Laser Temperature) Parameter Symbol Test Conditions Min Typ Max Unit Peak Optical Output Power PPEAK — 2.0 — — mW Center Wavelength λC — 1290 1310 1330 nm Spectral Width: Full Width at –3 dB Full Width at –20 dB ∆λ Modulated at 2.5 Gbits/s at rated power — — 0.20 0.8 0.30 1.0 nm nm Side-mode Suppression Ratio SMSR Modulated at 2.5 Gbits/s 30 — — dB Optical Isolation — 0 °C to 65 °C30 — — dB |
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