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BAR81WH6327 Datasheet(PDF) 2 Page - Infineon Technologies AG |
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BAR81WH6327 Datasheet(HTML) 2 Page - Infineon Technologies AG |
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2 / 6 page  2011-06-14 2 BAR81... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current VR = 20 V IR - - 20 nA Forward voltage IF = 100 mA VF - 0.93 1 V AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz CT - - 0.6 0.57 1 0.9 pF Forward resistance IF = 5 mA, f = 100 MHz rf - 0.7 1 Ω Charge carrier life time IF = 10 mA, IR = 6 mA, measured at IR = 3 mA, RL = 100 Ω τ rr - 80 - ns I-region width WI - 3.5 - µm Shunt Insertion loss1) IF = 10 mA, f = 1.89 GHz IL - 30 - dB Shunt isolation1) VR = 3 V, f = 1.89 GHz ISO - 0.7 - Configuration of the shunt-diode - A perfect ground is essential for optimum isolation - The anode pins should be used as passage for RF 1For more information please refer to Application Note 049. |
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