WFD2N60B datasheet(3/8 Pages) WINSEMI

Part #	WFD2N60B

Description	Silicon N-Channel MOSFET

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Manufacturer	WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]

Direct Link	http://www.winsemi.com

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WFD2N60B Product Description

Silicon

Silicon N-Channel

N-Channel

N-Channel MOSFET

MOSFET

WIN SEM I

M ICROELECTRON ICS

WIN SEM I

M ICROELECTRON ICS

WIN SEM I

M ICROELECTRON ICS

WIN SEM I

M ICROELECTRON ICS

WIN SEM I

M ICROELECTRON ICS

Fig.1 On-Region Characteristics

Fig.2 Transfer characteristics

Fig.3 On Resistance variation vs Drain

Current and Gate Voltage

Fig.4 Body Diode Forward Voltage

Variation With Source Current

And temperature

Fig.5 Capacitance Characteristics

Fig.6 Gate Charge Characteristics

N o te s :

1 .2 5 0 u s p u ls e te s t

2 .Tc = 2 5 C

。

T o p

VG S

1 5 V

1 0 V

8 V

7 V

6 . 5 V

6 V

5 V

5 . 5 V

B o t t o m

1

1 0

0 . 1

1

V

[V ]

D S

150 C

。

25 C

。

Notes:

1.250us pulse test

2.V

= 40V

D S

2

4

6

8

1 0

0 . 1

1

1 0

V

[V]

G S

V

=10V

G S

V

=20V

G S

Note:T =25 C

J

。

0 . 5

1 . 0

1 . 5

2 . 0

2 . 5

3 . 0

3 . 5

4 . 0

4 . 5

5 . 0

5 . 5

6 . 0

6 . 5

7 . 0

7 . 5

I [A]

D

150 C

。

25 C

。

Notes:

1.250us pulse test

2.V

=0V

G S

0 . 4

0 . 5

0 . 6

0 . 7

0 . 8

0 . 9

1 . 0

1 . 1

1 . 2

1 . 3

0 . 1

1

V

[V]

S D

Ciss=Cgs+Cgd(Cds=shorted)

Coss= Cds+ Cgd

C rss= C gd

1 0- 1

Not es:

1. V DS = 0V

2. f = 1MHz

1 00

1 01

0

4 0

8 0

1 2 0

1 6 0

2 0 0

2 4 0

2 8 0

3 2 0

3 6 0

4 0 0

V

[V]

D S

Cis s

Cr s s

Co s s

Q

Toltal Gate Charge[nC]

g

0

1

2

3

4

5

0

2

4

6

8

1 0

1 2

V

=120V

D S

V

=480V

D S

V

=300V

D S

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