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IXTH10P50 Datasheet(PDF) 1 Page - IXYS Corporation |
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IXTH10P50 Datasheet(HTML) 1 Page - IXYS Corporation |
1 / 2 page © 2002 IXYS All rights reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 150°C -500 V V DGR T J = 25 °C to 150°C; R GS = 1 MΩ -500 V V GS Continuous ±20 V V GSM Transient ±30 V I D25 T C = 25°C 10P50 -10 A 11P50 -11 A I DM T C = 25°C, pulse width limited by TJ 10P50 -40 A 11P50 -44 A I AR T C = 25°C 10P50 -10 A 11P50 -11 A E AR T C = 25°C30 mJ P D T C = 25°C 300 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C T L Maximum lead temperature for soldering 300 °C 1.6 mm (0.062 in.) from case for 10 s M d Mounting torque (TO-247) 1.13/10 Nm/lb.in. Weight TO-247 AD 6 g TO-268 4 g Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. V DSS V GS = 0 V, ID = -250 µA -500 V BV DSS Temperature Coefficient 0.054 %/K V GS(th) V DS = VGS, ID = -250 µA -3.0 -5.0 V V GS(th) Temperature Coefficient -0.122 %/K I GSS V GS = ±20 VDC, VDS = 0 ±100 nA I DSS V DS = 0.8 • VDSS T J =25° C -200 µA V GS = 0 V T J = 125°C-1 mA R DS(on) V GS = -10 V, ID = 0.5 • ID25 10P50 0.90 Ω 11P50 0.75 Ω R DS(on) Temperature Coefficient 0.6 %/K 94535F (7/02) TO-247 AD (IXTH) G = Gate D = Drain S = Source TAB = Drain TO-268 (IXTT) Case Style (TAB) G S Features International standard packages Low R DS (on) HDMOS TM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density D V DSS I D25 R DS(on) IXTH/IXTT 10P50 -500 V -10 A 0.90 Ω IXTH/IXTT 11P50 -500 V -11 A 0.75 Ω (TAB) D |
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