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K9K1208D0C Datasheet(PDF) 10 Page - Samsung semiconductor

Part # K9K1208D0C
Description  64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
Download  39 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K9K1208D0C Datasheet(HTML) 10 Page - Samsung semiconductor

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FLASH MEMORY
10
K9K1216D0C
K9K1216U0C
K9K1208D0C
K9K1208U0C
K9K1208Q0C
K9K1216Q0C
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)
Parameter
Symbol
Test Conditions
K9K12XXX0C
Unit
1.8V
2.65V
3.3V
Min Typ Max Min Typ Max Min Typ Max
Operat-
ing
Current
Sequential
Read
ICC1
tRC=50ns, CE=VIL
IOUT=0mA
-10
20
-
10
20
-
10
30
mA
Program
ICC2-
-
10
20
-
10
20
-
10
40
Erase
ICC3-
-
10
20
-
10
20
-
10
40
Stand-by Current(TTL)
ISB1
CE=VIH, WP=LOCKPRE=0V/VCC
--
1
-
-
1
-
-
1
Stand-by Cur-
rent(CMOS)
ISB2CE=VCC-0.2, WP=LOCKPRE=0V/VCC
-10
50
-
10
50
-
10
50
µA
Input Leakage Current
ILI
VIN=0 to Vcc(max)
-
-
±10
-
-
±10
-
-
±10
Output Leakage Current
ILO
VOUT=0 to Vcc(max)
-
-
±10
-
-
±10
-
-
±10
Input High Voltage
VIH*
I/O pins
VCCQ
-0.4
-
VCCQ
+0.3
VCCQ
-0.4
-
VCCQ
+0.3
2.0
-
VCCQ
+0.3
V
Except I/O pins
VCC
-0.4
-
Vcc
+0.3
VCC
-0.4
-
VCC
+0.3
2.0
-
VCC
+0.3
Input Low Voltage, All
inputs
VIL*
-
-0.3
-
0.4
-0.3
-
0.5 -0.3
-
0.8
Output High Voltage
Level
VOH
K9K12XXQ0C :IOH=-100
µA
K9K12XXD0C :IOH=-100
µA
K9K12XXU0C :IOH=-400
µA
VCCQ
-0.1
--
VCCQ
-0.4
--
2.4
-
-
Output Low Voltage
Level
VOL
K9K12XXQ0C :IOL=100uA
K9K12XXD0C :IOL=100
µA
K9K12XXU0C :IOL=2.1mA
-
-
0.1
-
-
0.4
-
-
0.4
Output Low Current(R/B)IOL(R/B)
K9K12XXQ0C :VOL=0.1V
K9K12XXD0C :VOL=0.1V
K9K12XXU0C :VOL=0.4V
3
4
-
34-
8
10
-
mA


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