SISS23DN datasheet(4/9 Pages) VISHAY

Part #	SISS23DN

Description	P-Channel 20 V (D-S) MOSFET

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Document Number: 62852

S13-1162-Rev. A, 13-May-13

Vishay Siliconix

SiSS23DN

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

0.1

1

10

100

0.0

0.2

0.4

0.6

0.8

1.0

V

SD - Source-to-Drain Voltage (V)

T

J = 150 °C

T

J = 25 °C

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

- 50

- 25

0

25

50

75

100

125

150

T

J - Temperature (°C)

I

D = 250 μA

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.000

0.004

0.008

0.012

0.016

0.020

0

1

2

3

4

5

V

GS - Gate-to-Source Voltage (V)

T

J = 125 °C

T

J = 25 °C

I

D = 20 A

0

20

40

60

80

100

0.001

0.01

0.1

1

10

100

1000

Time (s)

Safe Operating Area, Junction-to-Ambient

0.01

0.1

1

10

100

0.01

0.1

1

10

100

V

DS - Drain-to-Source Voltage (V)

* V

GS > minimum VGS at which RDS(on) is specified

10 s

100 us

100 ms

Limited by R

DS(on)*

1 ms

BVDSS Limited

10 ms

1 s

DC

1000

T

A = 25 °C

Single pulse

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