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MMB1G Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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MMB1G Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 3 page Production specification SILICON BRIDGE RECTIFIERS MMB1G--MMB10G Document Number: MMB701AA www.gmicroelec.com 1 FEATURES Glass:passivated chip junctions High surge overload rating: 30A peak Saves space on printed circuit boards High temperature soldering guaranteed: 260°C/10 seconds at 5 lbs. (2.3kg) tension MECHANICAL DATA Case: Molded plastic body over passivated junctions Terminals: Plated leads solderable per MIL-STD-750, Method 2026 Maximum Ratings (@TA = 25°C unless otherwise specified) Characteristic Symbol MMB1G MMB2G MMB4G MMB6G MMB8G MMB10G UNITS Peak Repetitive Reverse Voltage VRRM 100 200 400 600 800 1000 V RMS Reverse Voltage VRMS 70 140 280 420 560 700 V DC Blocking Voltage VDC 100 200 400 600 800 1000 V Maximum average forward Output current @TA=25℃ IF(AV) 0.5 1) 0.8 2) A Peak forward surge current 8.3ms single half-sine-wave superimposed on rated load IFSM 30 A Thermal Characteristics Characteristic Symbol MMB1G MMB2G MMB4G MMB6G MMB8G MMB10G UNITS Typical junction capacitance per leg (NOTE 3) CJ 8 p F Typical thermal resistance per leg (NOTE 1) (NOTE 2) R ΘJA RθJL RθJC 85 20 30 ℃ /W Operating junction temperature range TJ - 55 ---- + 150 ℃ Storage temperature range TSTG - 55 ---- + 150 ℃ Electrical Characteristics (@TA = 25°C unless otherwise specified) Characteristic Symbol MMB1G MMB2G MMB4G MMB6G MMB8G MMB10G UNITS Maximum instantaneous forward voltage at 0.4 A VF 1.0 V Maximum reverse current @TA=25℃ at rated DC blocking voltage @TA=100℃ IR 5.0 0.5 μ A m A NOTES: (1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3mm) pads (2) On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20 x 20mm) mounted on 0.05 x 0.05" (1.3 x 1.3mm) solder pad (3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts Pb Lead-free |
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Similar Description - MMB1G |
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