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BB200 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BB200 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 2001 Oct 12 2 Philips Semiconductors Product specification Low-voltage variable capacitance double diode BB200 FEATURES • Very steep C/V curve • C1: 70 pF; C4.5: 13.4 pF • C1 to C5 ratio: min. 5 • Low series resistance • Small plastic SMD package. APPLICATIONS • Electronic tuning in FM-radio • Voltage Controlled Oscillators (VCO). DESCRIPTION The BB200 is a variable capacitance double diode with a common cathode, fabricated in silicon planar technology and encapsulated in the SOT23 small plastic SMD package. MARKING PINNING TYPE NUMBER MARKING CODE BB200 SBp PIN DESCRIPTION 1 anode (a1) 2 anode (a2) 3 common cathode handbook, halfpage 2 1 3 MAM169 2 1 3 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). CHARACTERISTICS Tj =25 °C unless otherwise specified. SYMBOL PARAMETER MIN. MAX. UNIT Per diode VR continuous reverse voltage − 18 V IF continuous forward current − 50 mA Tstg storage temperature range −55 +150 °C Tj operating junction temperature −55 +85 °C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per diode IR reverse current VR =10V −− 50 nA rs diode series resistance f = 100 MHz; VR = 1.5 V − 0.43 0.6 Ω Cd diode capacitance VR = 1 V; f = 1 MHz 65.8 70 74.2 pF VR = 4.5 V; f = 1 MHz 12 13.4 14.8 pF capacitance ratio f = 1 MHz 5 −− C d1V () C d5V () ---------------- |
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