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NSR0340HT1G Datasheet(PDF) 2 Page - ON Semiconductor |
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NSR0340HT1G Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 4 page  NSR0340HT1G http://onsemi.com 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C RqJA PD 740 160 °C/W mW Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C RqJA PD 460 270 °C/W mW Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C 1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state. 2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Leakage (VR = 10 V) (VR = 25 V) (VR = 40 V) IR 0.2 0.4 1.3 1.0 3.0 6.0 mA Forward Voltage (IF = 10 mA) (IF = 100 mA) (IF = 200 mA) VF 320 415 470 350 490 590 mV Total Capacitance (VR = 10 V, f = 1 MHz) CT 6.0 pF Reverse Recovery Time (IF = IR = 10 mA, IR = 1.0 mA) trr 5.0 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. DC Current Source is adjusted for a Forward Current (IF) of 10 mA. 2. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current IRM of 10 mA. 3. Pulse Generator transition time << trr. 4. IR(REC) is measured at 1 mA. Typically 0.1 X IRM or 0.25 X IRM. 5. tp » trr RL = 50 W Current Transformer DUT 750 mH 0.1 mF 50 W Output Pulse Generator tr tp 10% 90% IF IRM trr iR(REC) = 1 mA Output Pulse (IF = IRM = 10 mA; measured at iR(REC) = 1 mA) IF Pulse Generator Output Figure 1. Recovery Time Equivalent Test Circuit 50 W Input Oscilloscope 0.1 mF DC Current Source 0 V VR Adjust for IRM −+ |
Similar Part No. - NSR0340HT1G_14 |
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Similar Description - NSR0340HT1G_14 |
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