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NRVB230LSFT1G Datasheet(PDF) 2 Page - ON Semiconductor

Part # NRVB230LSFT1G
Description  Surface Mount Schottky Power Rectifier
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NRVB230LSFT1G Datasheet(HTML) 2 Page - ON Semiconductor

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MBR230LSFT1G
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30
V
Average Rectified Forward Current (At Rated VR, TL = 105°C)
IO
2.0
A
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 100 kHz, TL = 95°C)
IFRM
4.0
A
Non−Repetitive Peak Surge Current
(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)
IFSM
40
A
Storage Temperature
Tstg
−55 to 150
°C
Operating Junction Temperature
TJ
−55 to 125
°C
Voltage Rate of Change (Rated VR, TJ = 25°C)
dv/dt
10,000
V/
ms
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Lead (Note 1)
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 2)
Rtjl
Rtjl
Rtja
Rtja
26
21
325
82
°C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Mounted with minimum recommended pad size, PC Board FR4.
2. Mounted with 1 in. copper pad (Cu area 700 mm2).
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 3)
VF
TJ = 25°C
TJ = 100°C
V
(IF = 1.0 A)
(IF = 2.0 A)
0.38
0.43
0.30
0.37
Maximum Instantaneous Reverse Current (Note 3)
IR
TJ = 25°C
TJ = 100°C
mA
(VR = 30 V)
1.0
25
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width
≤ 250 ms, Duty Cycle ≤ 2%.


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