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NRVB230LSFT1G Datasheet(PDF) 2 Page - ON Semiconductor |
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NRVB230LSFT1G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 5 page MBR230LSFT1G http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 30 V Average Rectified Forward Current (At Rated VR, TL = 105°C) IO 2.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TL = 95°C) IFRM 4.0 A Non−Repetitive Peak Surge Current (Non−Repetitive peak surge current, halfwave, single phase, 60 Hz) IFSM 40 A Storage Temperature Tstg −55 to 150 °C Operating Junction Temperature TJ −55 to 125 °C Voltage Rate of Change (Rated VR, TJ = 25°C) dv/dt 10,000 V/ ms THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Lead (Note 1) Thermal Resistance, Junction−to−Lead (Note 2) Thermal Resistance, Junction−to−Ambient (Note 1) Thermal Resistance, Junction−to−Ambient (Note 2) Rtjl Rtjl Rtja Rtja 26 21 325 82 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Mounted with minimum recommended pad size, PC Board FR4. 2. Mounted with 1 in. copper pad (Cu area 700 mm2). ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 3) VF TJ = 25°C TJ = 100°C V (IF = 1.0 A) (IF = 2.0 A) 0.38 0.43 0.30 0.37 Maximum Instantaneous Reverse Current (Note 3) IR TJ = 25°C TJ = 100°C mA (VR = 30 V) 1.0 25 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%. |
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