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RBQ10T45ANZ Datasheet(PDF) 1 Page - Rohm |
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RBQ10T45ANZ Datasheet(HTML) 1 Page - Rohm |
1 / 9 page Data Sheet www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. Schottky Barrier Diode RBQ10T45ANZ lApplication lDimensions (Unit : mm) lStructure General rectification lFeatures 1) Cathode common type. 2) Low IR 3) High reliability lConstruction Silicon epitaxial planar lPackage Dimensions (Unit : mm) lAbsolute maximum ratings (Tc= 25°C) Reverse voltage (repetitive) VRM V Reverse voltage (DC) VR V Average rectified forward current (*1) Io A Forward current surge peak (60Hz・1cyc) IFSM A Junction temperature Tj °C Storage temperature Tstg °C (*1) Rating of per diode : Io/2 Symbol Min. Typ. Max. Unit Forward voltage VF - - 0.65 V IF=5A Reverse current IR - - 150 mA VR=45V Parameter Conditions Parameter -40 to +150 lElectrical characteristics (Tj = 25°C) Symbol Limits Unit 45 45 10 50 150 ROHM TO220FN Manufacture Date 1 1.2 1.3 0.8 (1) (2) (3) 10.0±0.3 0.1 2.8±0.2 0.1 4.5±0.3 0.1 0.7±0.1 0.05 2.6±0.5 1 540 7 1/5 2016.09 - Rev.A |
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