Si1013CX

www.vishay.com

Vishay Siliconix

S14-1601-Rev. B, 11-Aug-14

1

Document Number: 67995

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

P-Channel 20 V (D-S) MOSFET

Ordering Information:

Si1013CX-T1-GE3 (Lead (Pb)-free and Halogen-free)

FEATURES

• Typical ESD protection: 1000 V (HBM)

• Fast switching speed

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• Load / power switch for portable

devices

• Drivers: relays, solenoids, displays

• Battery operated systems

Notes

a. Maximum under steady state conditions is 650 °C/W.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

PRODUCT SUMMARY

-20

-0.45

1

-0.40

-0.32

Top View

SC-89 (3 leads)

1

G

2

S

1

2

S

D

3

P-Channel MOSFET

D

S

G

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

-20

V

Gate-Source Voltage

± 8

A

Pulsed Drain Current (t = 300 μs)

-1.5

Continuous Source-Drain Diode Current

Maximum Power Dissipation

W

Operating Junction and Storage Temperature Range

-55 to +150

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYPICAL

MAXIMUM

UNIT

t

≤ 5 s

440

530

°C/W

Steady State

540

650