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SI1013CX Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI1013CX Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Si1013CX www.vishay.com Vishay Siliconix S14-1601-Rev. B, 11-Aug-14 1 Document Number: 67995 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 P-Channel 20 V (D-S) MOSFET Marking Code: 6 Ordering Information: Si1013CX-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • TrenchFET® power MOSFET • 100 % Rg tested • Typical ESD protection: 1000 V (HBM) • Fast switching speed • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Load / power switch for portable devices • Drivers: relays, solenoids, displays • Battery operated systems Notes a. Maximum under steady state conditions is 650 °C/W. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. PRODUCT SUMMARY VDS (V) RDS(on) ( Ω)ID (A) Qg (TYP.) (nC) -20 0.760 at VGS = -4.5 V -0.45 1 1.040 at VGS = -2.5 V -0.40 1.500 at VGS = -1.8 V -0.32 Top View SC-89 (3 leads) 1 G 2 S 1 2 S D 3 P-Channel MOSFET D S G ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ± 8 Continuous Drain Current (TJ = 150 °C) TA = 25 °C ID -0.45 b, c A TA = 70 °C -0.36 b, c Pulsed Drain Current (t = 300 μs) IDM -1.5 Continuous Source-Drain Diode Current TA = 25 °C IS -0.16 b, c Maximum Power Dissipation TA = 25 °C PD 0.19 b, c W TA = 70 °C 0.12 b, c Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum Junction-to-Ambient a, b t ≤ 5 s RthJA 440 530 °C/W Steady State 540 650 |
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