SI4833BDY datasheet(8/11 Pages) VISHAY

Part #	SI4833BDY

Description	P-Channel 30 V (D-S) MOSFET with Schottky Diode

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 67537

S11-1649-Rev. B, 15-Aug-11

Vishay Siliconix

Si4833BDY

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SCHOTTKY TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?67537.

Reverse Current vs. Junction Temperature

125

150

TJ - Junction Temperature (°C)

0

255075

100

0.000001

0.00001

0.0001

0.001

0.01

0.1

20 V

30 V

Forward Voltage Drop

VF - Forward Voltage Drop (V)

0.1

1

10

0.001

0.01

0

0.1

0.2

0.3

0.4

0.5

TJ = 25 °C

TJ = 150 °C

Capacitance

0

100

200

300

400

500

0

6

12

18

24

30

VKA - Reverse Voltage (V)

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