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EDB103 Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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EDB103 Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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1 / 3 page  Production specification SILICON BRIDGE RECTIFIERS EDB101--EDB106 Document Number: DFM706AA www.gmicroelec.com 1 SFEATURES Rating to 1000V PRVP Surge overload rating to 30 Amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique results in inexpensive product Lead solderable per MIL-STD-202 method 208 Glass passivated chip junctions Plastic material has UL flammability classification94V-O Maximum Ratings (@TA = 25°C unless otherwise specified) Characteristic Symbol EDB101 EDB102 EDB103 EDB104 EDB105 EDB106 UNITS Peak Repetitive Reverse Voltage VRRM 50 100 150 200 300 400 V RMS Reverse Voltage VRMS 35 70 105 140 210 280 V DC Blocking Voltage VDC 50 100 150 200 300 400 V Maximum average forward Output current @TA=55℃ IF(AV) 1.0 A Peak forward surge current 8.3ms single half-sine-wave superimposed on rated load IFSM 30 A Thermal Characteristics Characteristic Symbol EDB101 EDB102 EDB103 EDB104 EDB105 EDB106 UNITS Typical junction calacitance (NOTE 2) CJ 15 10 pF Operating junction temperature range TJ - 55 ---- + 150 ℃ Storage temperature range TSTG - 55 ---- + 150 ℃ Electrical Characteristics (@TA = 25°C unless otherwise specified) Characteristic Symbol EDB101 EDB102 EDB103 EDB104 EDB105 EDB106 UNITS Maximum instantaneous forward voltage at 1.0 A VF 1.0 V Maximum reverse current @TA=25℃ at rated DC blocking voltage @TA=100℃ IR 10 1.0 μ A mA Maximum reverse recovery time (NOTE 1) trr 50 ns NOTE: 1. Test conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A. 2. Measured at 1 MHz and applied reverse voltage of 4.0 v olts. Pb Lead-free |
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