2

Symbol

Parameter

Units

Absolute Max.

VDD

Device Voltage, RF output to ground

V

6

VGG

Gate Voltage

V

0.8

dBm

18

dBm

28

W

1.2

Junction Temperature

150

Storage Temperature

-65 to 150

Notes:

1. Operation of this device in excess of any of these limits may cause permanent damage.

3. Thermal resistance measured using Infra-red measurement technique, with both channels turned on, hence IDDtotal=100mA.

Electrical Specifications

component list in Table 1, for 1.95GHz matching.

Symbol

Parameter and Test Condition

Units

Min.

Typ.

Max.

VGG

Operational Gate Voltage (to adjust for given IDD)

V

0.43

0.58

0.7

Noise Figure

dB

0.58

0.9

Gain

Gain

dB

22.3

24

25.8

Output Third Order Intercept Point

dBm

33.3

OP1dB

Output Power at 1dB Gain Compression

dBm

18.4

IRL

Input Return Loss, 50Ω source

dB

13.5

ORL

Output Return Loss, 50Ω load

dB

4.6

|S12|

Reverse Isolation

dB

38.6

Isolation between IN1 and IN2

dB

43

Notes:

4. Board transmission line losses have been deembedded.