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MBRS3200T3G Datasheet(PDF) 3 Page - ON Semiconductor |
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MBRS3200T3G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 4 page MBRS3200T3G, NRVBS3200T3G http://onsemi.com 3 1.0E−09 160 0 20 40 60 80 100 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current 120 140 180 200 TA = 25°C TA = 150°C TA = 100°C 1.0E−08 1.0E−07 1.0E−06 1.0E−05 1.0E−04 1.0E−02 1.0E−09 160 0 20 40 60 80 100 VR, REVERSE VOLTAGE (V) Figure 4. Maximum Reverse Current 120 140 180 200 1.0E−05 1.0E−04 1.0E−03 1.0E−07 1.0E−02 TA = 175°C 1.0E−03 TA = 25°C TA = 150°C TA = 100°C TA = 175°C 1.0E−06 1.0E−08 Figure 5. Typical Capacitance 1000 10 160 0 20 40 60 80 100 VR, REVERSE VOLTAGE (V) 100 120 140 180 200 TC = 25°C f = 1 MHz Typical Capacitance at 0 V = 209 V 0 150 80 90 100 110 120 TL, LEAD TEMPERATURE (°C) Figure 6. Current Derating − Lead 130 140 180 1 2 3 4 6 7 5 SQUARE WAVE dc Figure 7. Forward Power Dissipation 5 0 4 01 2 3 IO, AVERAGE FORWARD CURRENT (A) 2.5 56 0.5 1 1.5 2 4.5 3 3.5 4 SQUARE WAVE dc 160 170 RqJL = 13°C/W |
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