MJD6039T4 datasheet(2/5 Pages) ONSEMI

Part #	MJD6039T4

Description	Darlington Power Transistors

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MJD6039, NJVMJD6039T4G

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THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

6.25

C/W

Thermal Resistance, Junction−to−Ambient (Note 2)

RqJA

71.4

C/W

2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(IC = 30 mAdc, IB = 0)

VCEO(sus)

80

−

Vdc

Collector−Cutoff Current

(VCE = 40 Vdc, IB = 0)

ICEO

−

10

mAdc

ON CHARACTERISTICS (Note 3)

DC Current Gain

(IC = 1 Adc, VCE = 4 Vdc)

(IC = 2 Adc, VCE = 4 Vdc)

hFE

1000

500

−

Collector−Emitter Saturation Voltage

(IC = 2 Adc, IB = 8 mAdc)

VCE(sat)

−

2.5

Vdc

Base−Emitter On Voltage

(IC = 2 Adc, VCE = 4 Vdc)

VBE(on)

−

2.8

Vdc

DYNAMIC CHARACTERISTICS

Small−Signal Current Gain

(IC = 0.75 Adc, VCE = 10 Vdc, f = 1 kHz)

hfe

25

−

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

Cob

−

100

pF

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

0.04

0.2

2

0.1

0.06

0.4

1

4

IC, COLLECTOR CURRENT (AMP)

VCC = 30 V

IC/IB = 250

2

1

0.8

0.6

0.4

0.2

ts

tf

Figure 1. Switching Times Test Circuit

Figure 2. Switching Times

tr

IB1 = IB2

TJ = 25C

td @ VBE(off) = 0

PNP

NPN

4

0.6

V2

APPROX

+8 V

0

 8 k

SCOPE

VCC

-30 V

RC

51

FOR td AND tr, D1 IS DISCONNECTED

AND V2 = 0

FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.

25

ms

tr, tf  10 ns

DUTY CYCLE = 1%

+ 4 V

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1, MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB  100 mA

MSD6100 USED BELOW IB  100 mA

V1

APPROX

-12 V

TUT

RB

D1

 120

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