SQ1539EH datasheet(1/12 Pages) VISHAY

Part #	SQ1539EH

Description	Automotive Dual N-Channel 20 V (D-S) 175 °C MOSFET

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SQ1912EH

www.vishay.com

Vishay Siliconix

S15-1918 Rev. A, 17-Aug-15

1

Document Number: 67394

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Automotive Dual N-Channel 20 V (D-S) 175 °C MOSFET

Marking Code: 9H

FEATURES

• TrenchFET® power MOSFET

• AEC-Q101 qualified

• 100 % Rg tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

Notes

a. Package limited.

b. Pulse test; pulse width

≤ 300 μs, duty cycle ≤ 2 %.

c. When mounted on 1" square PCB (FR4 material).

PRODUCT SUMMARY

VDS (V)

20

RDS(on) (

Ω) at VGS = 4.5 V

0.280

RDS(on) (

Ω) at VGS = 2.5 V

0.360

RDS(on) (

Ω) at VGS = 1.8 V

0.450

ID (A)

0.8

Configuration

Dual

Package

SC-70

SOT-363

SC-70 Dual (6 leads)

Top View

1

S

1

2

G

1

3

D

2

D

1

6

G

2

5

S

2

4

D1

S1

G1

D2

S2

G2

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

± 12

Continuous Drain Current a

TC = 25 °C

ID

0.8

A

TC = 125 °C

0.8

Continuous Source Current (Diode Conduction) a

IS

0.8

Pulsed Drain Current b

IDM

3

Single Pulse Avalanche Current

L = 0.1 mH

IAS

3.8

Single Pulse Avalanche Energy

EAS

7.2

mJ

Maximum Power Dissipation b

TC = 25 °C

PD

1.5

W

TC = 125 °C

0.5

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to +175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

LIMIT

UNIT

Junction-to-Ambient

PCB Mount c

RthJA

220

°C/W

Junction-to-Foot (Drain)

RthJF

100

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