SQ2319ADS datasheet(1/11 Pages) VISHAY

Part #	SQ2319ADS

Description	Automotive P-Channel 30 V (D-S) 175 °C MOSFET

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SQ2303ES

www.vishay.com

Vishay Siliconix

S11-2111-Rev. B, 07-Nov-11

1

Document Number: 67023

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Automotive P-Channel 30 V (D-S) 175 °C MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

•TrenchFET® Power MOSFET

• AEC-Q101 Qualifiedc

•100 % Rg and UIS Tested

• Compliant to RoHS Directive 2002/95/EC

Notes

a. Pulse test; pulse width

 300 μs, duty cycle  2 %.

b. When mounted on 1" square PCB (FR-4 material).

c. Parametric verification ongoing.

PRODUCT SUMMARY

VDS (V)

- 30

RDS(on) () at VGS = - 10 V

0.170

RDS(on) () at VGS = - 4.5 V

0.370

ID (A)

- 2.5

Configuration

Single

S

G

D

P-Channel MOSFET

G

TO-236

(SOT-23)

S

D

Top View

SQ2303ES*

* Marking Code:8Cxxx

2

3

1

ORDERING INFORMATION

Package

SOT-23

Lead (Pb)-free and Halogen-free

SQ2303ES-T1-GE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

- 30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current

TC = 25 °C

ID

- 2.5

A

TC = 125 °C

- 1.5

Continuous Source Current (Diode Conduction)

IS

- 2.4

Pulsed Drain Currenta

IDM

- 10

Single Pulse Avalanche Current

L = 0.1 mH

IAS

- 7

Single Pulse Avalanche Energy

EAS

2.4

mJ

Maximum Power Dissipationa

TC = 25 °C

PD

1.9

W

TC = 125 °C

0.6

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

LIMIT

UNIT

Junction-to-Ambient

PCB Mountb

RthJA

175

°C/W

Junction-to-Foot (Drain)

RthJF

78

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