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Vishay Siliconix

S15-2366-Rev. A, 12-Oct-15

4

Document Number: 76397

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Gate Charge

Source Drain Diode Forward Voltage

Threshold Voltage

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Drain Source Breakdown vs. Junction Temperature

0

2

4

6

8

10

0369

12

Q

I

V

0.001

0.01

0.1

1

10

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V

T

T

-0.5

-0.2

0.1

0.4

0.7

1.0

-50

-25

0

25

50

75

100

125

150

T

I

I

0.5

0.8

1.1

1.4

1.7

2.0

-50

-25

0

255075

100

125

150

T

I

V

V

0.00

0.10

0.20

0.30

0.40

0.50

02468

10

V

T

T

-55

-52

-49

-46

-43

-40

-50

-25

0

255075

100

125

150

T

I