SQ2348ES datasheet(4/11 Pages) VISHAY

Part #	SQ2348ES

Description	Automotive P-Channel 30 V (D-S) 175 °C MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SQ2303ES

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Vishay Siliconix

S11-2111-Rev. B, 07-Nov-11

4

Document Number: 67023

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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Source Drain Diode Forward Voltage

Threshold Voltage

Drain Source Breakdown vs. Junction Temperature

0.5

0.8

1.1

1.4

1.7

2.0

- 50

- 25

0

25

50

75

100

125

150

175

T

J - Junction Temperature (°C)

I

D = 1.7 A

V

GS = 4.5 V

V

GS = 10 V

0.0

0.2

0.4

0.6

0.8

1.0

02468

10

V

GS - Gate-to-Source Voltage (V)

T

J = 150 °C

T

J = 25 °C

0.001

0.01

0.1

1

10

100

0.0

0.3

0.6

0.9

1.2

1.5

V

SD - Source-to-Drain Voltage (V)

T

J = 25 °C

T

J = 150 °C

-0.5

-0.2

0.1

0.4

0.7

1.0

- 50

- 25

0

25

50

75

100

125

150

175

T

J -Temperature (°C)

I

D = 250 μA

I

D = 5 mA

-40

-38

-36

-34

-32

-30

- 50

- 25

0

25

50

75

100

125

150

175

T

J - Junction Temperature (°C)

I

D = 1 mA

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