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SQ2315ES Datasheet(PDF) 1 Page - Vishay Siliconix |
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SQ2315ES Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 11 page SQ2361ES www.vishay.com Vishay Siliconix S15-1208-Rev. A, 21-May-15 1 Document Number: 66894 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Automotive P-Channel 60 V (D-S) 175 °C MOSFET Marking Code: 9Dxxx FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. When mounted on 1" square PCB (FR4 material). PRODUCT SUMMARY VDS (V) -60 RDS(on) () at VGS = -10 V 0.177 RDS(on) () at VGS = -4.5 V 0.246 ID (A) -2.8 Configuration Single P-Channel MOSFET S D G Top View SOT-23 (TO-236) 1 G 2 S D 3 ORDERING INFROMATION Package SOT-23 Lead (Pb)-free and Halogen-free SQ2361ES-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C ID -2.8 A TC = 125 °C -1.6 Continuous Source Current (Diode Conduction) IS -2.5 Pulsed Drain Current a IDM -11 Single Pulse Avalanche Current L = 0.1 mH IAS -12.5 Single Pulse Avalanche Energy EAS 7.8 mJ Maximum Power Dissipation a TC = 25 °C PD 2 W TC = 125 °C 0.67 Operating Junction and Storage Temperature Range TJ, Tstg -55 to +175 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mount b RthJA 175 °C/W Junction-to-Foot (Drain) RthJF 75 |
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