SQ2315ES datasheet(1/11 Pages) VISHAY

Part #	SQ2315ES

Description	Automotive P-Channel 60 V (D-S) 175 °C MOSFET

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SQ2361ES

www.vishay.com

Vishay Siliconix

S15-1208-Rev. A, 21-May-15

1

Document Number: 66894

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Automotive P-Channel 60 V (D-S) 175 °C MOSFET

Marking Code: 9Dxxx

FEATURES

• TrenchFET® power MOSFET

• AEC-Q101 qualified

• 100 % Rg and UIS tested

• Material categorization:



for definitions of compliance please see

www.vishay.com/doc?99912



Notes

a. Pulse test; pulse width

 300 μs, duty cycle  2 %.

b. When mounted on 1" square PCB (FR4 material).

PRODUCT SUMMARY

VDS (V)

-60

RDS(on) () at VGS = -10 V

0.177

RDS(on) () at VGS = -4.5 V

0.246

ID (A)

-2.8

Configuration

Single

P-Channel MOSFET

S

D

G

Top View

SOT-23 (TO-236)

1

G

2

S

D

3

ORDERING INFROMATION

Package

SOT-23

Lead (Pb)-free and Halogen-free

SQ2361ES-T1-GE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

-60

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current

TC = 25 °C

ID

-2.8

A

TC = 125 °C

-1.6

Continuous Source Current (Diode Conduction)

IS

-2.5

Pulsed Drain Current a

IDM

-11

Single Pulse Avalanche Current

L = 0.1 mH

IAS

-12.5

Single Pulse Avalanche Energy

EAS

7.8

mJ

Maximum Power Dissipation a

TC = 25 °C

PD

2

W

TC = 125 °C

0.67

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to +175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

LIMIT

UNIT

Junction-to-Ambient

PCB Mount b

RthJA

175

°C/W

Junction-to-Foot (Drain)

RthJF

75

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