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SQ2361AEES Datasheet(PDF) 1 Page - Vishay Siliconix |
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SQ2361AEES Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 11 page SQ2319ADS www.vishay.com Vishay Siliconix S15-2366-Rev. A, 12-Oct-15 1 Document Number: 76397 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Automotive P-Channel 40 V (D-S) MOSFET Marking Code: 9F FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified c • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. When mounted on 1" square PCB (FR4 material). PRODUCT SUMMARY VDS (V) -40 RDS(on) ( Ω) at VGS = -10 V 0.075 RDS(on) ( Ω) at VGS = -4.5 V 0.145 ID (A) -4.6 Configuration Single Package SOT-23 Top View SOT-23 (TO-236) 1 G 2 S D 3 S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS -40 V Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C ID -4.6 A TC = 125 °C -2 Continuous Source Current (Diode Conduction) IS -2.2 Pulsed Drain Current a IDM -18 Single Pulse Avalanche Current L = 0.1 mH IAS -13 Single Pulse Avalanche Energy EAS 8.4 mJ Maximum Power Dissipation a TC = 25 °C PD 2.5 W TC = 125 °C 0.5 Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mount b RthJA 166 °C/W Junction-to-Foot (Drain) RthJF 50 |
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