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SQ2325ES Datasheet(PDF) 5 Page - Vishay Siliconix |
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SQ2325ES Datasheet(HTML) 5 Page - Vishay Siliconix |
5 / 11 page SQ2361AEES www.vishay.com Vishay Siliconix S15-1208-Rev. A, 21-May-15 5 Document Number: 62997 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage Drain Source Breakdown vs. Junction Temperature Safe Operating Area 0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 V SD - Source-to-Drain Voltage (V) T J = 25 °C T J = 150 °C - 0.5 - 0.2 0.1 0.4 0.7 1.0 - 50 - 25 0 25 50 75 100 125 150 175 T J - Temperature (°C) I D = 250 μA I D = 5 mA - 75 - 71 - 67 - 63 - 59 - 55 - 50 - 25 0 25 50 75 100 125 150 175 T J - Junction Temperature (°C) I D = 1 mA 0.01 0.1 1 10 100 0.01 0.1 1 10 100 V DS -Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified 100 ms Limited by R DS(on)* 1 ms I DM Limited T C = 25 °C Single Pulse BVDSS Limited 10 ms 100 μs 1s 10 s DC |
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