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SQ3425EV Datasheet(PDF) 1 Page - Vishay Siliconix |
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SQ3425EV Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 12 page SQ3427AEEV www.vishay.com Vishay Siliconix S15-1676-Rev. A, 16-Jul-15 1 Document Number: 65333 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Automotive P-Channel 60 V (D-S) 175 °C MOSFET Marking Code: 8Y FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified c • 100 % Rg and UIS tested • Typical ESD protection 800 V • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. When mounted on 1" square PCB (FR4 material). c. Parametric verification ongoing. PRODUCT SUMMARY VDS (V) -60 RDS(on) () at VGS = -10 V 0.095 RDS(on) () at VGS = -4.5 V 0.135 ID (A) -5.3 Configuration Single Package TSOP-6 P-Channel MOSFET (4) S (1, 2, 5, 6) D (3) G Top View TSOP-6 Single 1 D 2 D 3 G D 6 D 5 S 4 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C ID -5.3 A TC = 125 °C -3 Continuous Source Current (Diode Conduction) IS -6.3 Pulsed Drain Current a IDM -21 Single Pulse Avalanche Current L = 0.1 mH IAS -21 Single Pulse Avalanche Energy EAS 22 mJ Maximum Power Dissipation a TC = 25 °C PD 5 W TC = 125 °C 1.6 Operating Junction and Storage Temperature Range TJ, Tstg -55 to +175 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mount b RthJA 110 °C/W Junction-to-Foot (Drain) RthJF 30 |
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