SQD10N30-330H datasheet(1/10 Pages) VISHAY

Part #	SQD10N30-330H

Description	Automotive P-Channel 80 V (D-S) 175 °C MOSFET

Download	10 Pages

Scroll/Zoom	100%

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

1 / 10 page

SQD50P08-25L

www.vishay.com

Vishay Siliconix

S12-1846-Rev. B, 30-Jul-12

1

Document Number: 72217

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Automotive P-Channel 80 V (D-S) 175 °C MOSFET

FEATURES

•TrenchFET® Power MOSFET

• AEC-Q101 Qualifiedd

•100 % Rg and UIS Tested

• Material categorization:



For definitions of compliance please see

www.vishay.com/doc?99912

Notes

a. Package limited.

b. Pulse test; pulse width

 300 μs, duty cycle  2 %.

c. When mounted on 1" square PCB (FR-4 material).

d. Parametric verification ongoing.

PRODUCT SUMMARY

VDS (V)

- 80

RDS(on) () at VGS = - 10 V

0.025

RDS(on) () at VGS = - 4.5 V

0.031

ID (A)

- 50

Configuration

Single

S

G

D

P-Channel MOSFET

TO-252

S

GD

Top View

Drain Connected to Tab

ORDERING INFORMATION

Package

TO-252

Lead (Pb)-free and Halogen-free

SQD50P08-25L-GE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

- 80

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current

TC = 25 °Ca

ID

- 50

A

TC = 125 °C

- 28

Continuous Source Current (Diode Conduction)a

IS

- 50

Pulsed Drain Currentb

IDM

- 120

Single Pulse Avalanche Current

L = 0.1 mH

IAS

- 45

Single Pulse Avalanche Energy

EAS

100

mJ

Maximum Power Dissipationb

TC = 25 °C

PD

136

W

TC = 125 °C

45

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

LIMIT

UNIT

Junction-to-Ambient

PCB Mountc

RthJA

50

°C/W

Junction-to-Case (Drain)

RthJC

1.1

Similar Part No. - SQD10N30-330H

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	SQD10N30-330H	179Kb / 10P	Automotive P-Channel 60 V (D-S) 175 °C MOSFET Rev. C, 24-Oct-11
	SQD10N30-330H	234Kb / 11P	Automotive N-Channel 150 V (D-S) 175 °C MOSFET Rev. G, 02-Nov-15
	SQD10N30-330H	180Kb / 10P	Automotive P-Channel 100 V (D-S) 175 °C MOSFET Rev. B 22-Aug-11
	SQD10N30-330H	179Kb / 10P	Automotive P-Channel 30 V (D-S) 175 °C MOSFET Rev. C, 03-Sep-12
	SQD10N30-330H	182Kb / 10P	Automotive N-Channel 100 V (D-S) 175 °C MOSFET Rev. A, 22-Apr-13

More results

Similar Description - SQD10N30-330H

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	SQJA81EP	236Kb / 9P	Automotive P-Channel 80 V (D-S) 175 °C MOSFET 01-Jan-2023
	SQJ479EP	250Kb / 10P	Automotive P-Channel 80 V (D-S) 175 °C MOSFET 01-Jan-2023
	SQM50P08-25L	164Kb / 10P	Automotive P-Channel 80 V (D-S) 175 °C MOSFET Rev. B, 30-Jul-12
	SQ2337ES	242Kb / 10P	Automotive P-Channel 80 V (D-S) 175 °C MOSFET Rev. B, 20-May-13
	SQD50P08-28	186Kb / 10P	Automotive P-Channel 80 V (D-S) 175 °C MOSFET Rev. A, 10-Oct-11
	SQM50P08-25L	164Kb / 9P	Automotive P-Channel 80 V (D-S) 175 °C MOSFET 01-Jan-2022
	SQS181ELNW	203Kb / 7P	Automotive P-Channel 80 V (D-S) 175 °C MOSFET 01-Jan-2023
	SQD50P08-25L	169Kb / 9P	Automotive P-Channel 80 V (D-S) 175 °C MOSFET 01-Jan-2023
	SQJ181ELP	182Kb / 6P	Automotive P-Channel 80 V (D-S) 175 °C MOSFET 01-Jan-2023
	SQD50P08-25L	170Kb / 10P	Automotive P-Channel 80 V (D-S) 175 °C MOSFET Rev. B, 30-Jul-12
	SQJ469EP	166Kb / 11P	Automotive P-Channel 80 V (D-S) 175 °C MOSFET Rev. B, 28-Nov-11

More results

SQD10N30-330H Datasheet(PDF) 1 Page - Vishay Siliconix

SQD10N30-330H Datasheet(HTML) 1 Page - Vishay Siliconix

Similar Part No. - SQD10N30-330H

Similar Description - SQD10N30-330H

Html Pages

1 2 3 4 5 6 7 8 9 10

Datasheet Download

Link URL