SQD25N15-52 datasheet(4/10 Pages) VISHAY

Part #	SQD25N15-52

Description	Automotive P-Channel 80 V (D-S) 175 °C MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SQD50P08-25L

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Vishay Siliconix

S12-1846-Rev. B, 30-Jul-12

4

Document Number: 72217

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Gate Charge

Source Drain Diode Forward Voltage

Threshold Voltage

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Drain Source Breakdown vs. Junction Temperature

0

2

4

6

8

10

0

10

20

30

40

50

60

70

80

90

100

Q

g -Total Gate Charge (nC)

I

D = 12.5 A

V

DS = 40 V

0.001

0.01

0.1

1

10

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V

SD - Source-to-Drain Voltage (V)

T

J = 25 °C

T

J = 150 °C

-0.4

-0.1

0.2

0.5

0.8

1.1

- 50

- 25

0

25

50

75

100

125

150

175

T

J -Temperature (°C)

ID = 250 μA

ID = 5 mA

0.5

0.9

1.3

1.7

2.1

2.5

- 50

- 25

0

25

50

75

100

125

150

175

T

J - Junction Temperature (°C)

I

D = 12.5 A

V

GS = 4.5 V

V

GS = 10 V

0.00

0.03

0.06

0.09

0.12

0.15

02468

10

V

GS - Gate-to-Source Voltage (V)

T

J = 150 °C

T

J = 25 °C

- 105

- 100

-95

-90

-85

-80

- 50

- 25

0

25

50

75

100

125

150

175

T

J - Junction Temperature (°C)

I

D = 10 mA

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SQD25N15-52 Datasheet(PDF) 4 Page - Vishay Siliconix

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