SQD50N04-5m6L datasheet(4/10 Pages) VISHAY

Part #	SQD50N04-5m6L

Description	Automotive P-Channel 100 V (D-S) 175 °C MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SQD40P10-40L

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Vishay Siliconix

S11-1559-Rev. B 22-Aug-11

4

Document Number: 67022

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Gate Charge

Source Drain Diode Forward Voltage

Threshold Voltage

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Drain Source Breakdown vs. Junction Temperature

0

2

4

6

8

10

0

10

20

30

40

50

60

70

80

90

100

Q

g - Total Gate Charge (nC)

I

D = 9.2 A

V

DS = 50 V

0.001

0.01

0.1

1

10

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V

SD - Source-to-Drain Voltage (V)

T

J = 25 °C

T

J = 150 °C

-0.4

-0.1

0.2

0.5

0.8

1.1

- 50

- 25

0

25

50

75

100

125

150

175

T

J -Temperature (°C)

I

D = 250 μA

I

D = 5 mA

0.5

1.0

1.5

2.0

2.5

- 50

- 25

0

25

50

75

100

125

150

175

T

J - Junction Temperature (°C)

I

D = 9.2 A

V

GS = 4.5 V

V

GS = 10 V

0.00

0.05

0.10

0.15

0.20

0.25

02468

10

V

GS - Gate-to-Source Voltage (V)

T

J = 150 °C

T

J = 25 °C

- 135

- 130

- 125

- 120

- 115

- 110

- 105

- 50

- 25

0

25

50

75

100

125

150

175

T

J - Junction Temperature (°C)

I

D = 10 mA

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SQD50N04-5m6L Datasheet(PDF) 4 Page - Vishay Siliconix

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