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SQD50N06-09L Datasheet(PDF) 1 Page - Vishay Siliconix |
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SQD50N06-09L Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 10 page SQD50P08-25L www.vishay.com Vishay Siliconix S12-1846-Rev. B, 30-Jul-12 1 Document Number: 72217 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Automotive P-Channel 80 V (D-S) 175 °C MOSFET FEATURES •TrenchFET® Power MOSFET • AEC-Q101 Qualifiedd •100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. PRODUCT SUMMARY VDS (V) - 80 RDS(on) () at VGS = - 10 V 0.025 RDS(on) () at VGS = - 4.5 V 0.031 ID (A) - 50 Configuration Single S G D P-Channel MOSFET TO-252 S GD Top View Drain Connected to Tab ORDERING INFORMATION Package TO-252 Lead (Pb)-free and Halogen-free SQD50P08-25L-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS - 80 V Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °Ca ID - 50 A TC = 125 °C - 28 Continuous Source Current (Diode Conduction)a IS - 50 Pulsed Drain Currentb IDM - 120 Single Pulse Avalanche Current L = 0.1 mH IAS - 45 Single Pulse Avalanche Energy EAS 100 mJ Maximum Power Dissipationb TC = 25 °C PD 136 W TC = 125 °C 45 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mountc RthJA 50 °C/W Junction-to-Case (Drain) RthJC 1.1 |
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