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KBU8G Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited

Part # KBU8G
Description  Silicon Bridge Rectifiers
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Manufacturer  BILIN [Galaxy Semi-Conductor Holdings Limited]
Direct Link  http://www.galaxycn.com
Logo BILIN - Galaxy Semi-Conductor Holdings Limited

KBU8G Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited

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Production specification
Silicon Bridge Rectifiers
KBU8A--KBU8M
Document Number: KBU807AA
www.gmicroelec.com
1
FEATURES
Rating to 1000V PRV
Surge overload rating to 300 Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
Maximum Ratings (@TA = 25°C unless otherwise specified)
Characteristic
Symbol
KBU8A
KBU8B
KBU8D
KBU8G
KBU8J
KBU8K
KBU8M
UNITS
Maximum recurrent peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forward Output current
@TA=25℃
IF(AV)
8.0
A
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load
IFSM
300
A
Thermal Characteristics
Characteristic
Symbol
KBU8A
KBU8B
KBU8D
KBU8G
KBU8J
KBU8K
KBU8M
UNITS
Operating junction temperature range
TJ
- 55 ---- + 125
℃
Storage temperature range
TSTG
- 55 ---- + 150
℃
Electrical Characteristics (@TA = 25°C unless otherwise specified)
Characteristic
Symbol
KBU8A
KBU8B
KBU8D
KBU8G
KBU8J
KBU8K
KBU8M
UNITS
Maximum instantaneous forward voltage
@4.0A
VF
1.1
V
Maximum reverse current @TA=25℃
at rated DC blocking voltage @TA=100℃
IR
10
1.0
μ A
m A
Pb
Lead-free


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