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SQR70090ELR Datasheet(PDF) 1 Page - Vishay Siliconix |
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SQR70090ELR Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 7 page SQR70090ELR www.vishay.com Vishay Siliconix S16-1763-Rev. A, 05-Sep-16 1 Document Number: 75462 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Automotive N-Channel 100 V (D-S) 175 °C MOSFET FEATURES • TrenchFET® power MOSFET • Unplated drain tab (heatsink) • Package with low thermal resistance • AEC-Q101 qualified • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR4 material). PRODUCT SUMMARY VDS (V) 100 RDS(on) () at VGS = 10 V 0.0087 RDS(on) () at VGS = 4.5 V 0.0106 ID (A) 86 Configuration Single Package TO-252 Reverse Lead DPAK 1 mm max. 1 mm max. TO-252 Reverse Lead DPAK Unplated Top View G S D Bottom View S G D Drain connected to tab. The drain tab (heatsink) is unplated (at least 80 % of area). N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C ID 86 A TC = 125 °C 50 Continuous Source Current (Diode conduction) a IS 100 Pulsed Drain Current b IDM 150 Single Pulse Avalanche Current L = 0.1 mH IAS 45 Single Pulse Avalanche Energy EAS 101 mJ Maximum Power Dissipation b TC = 25 °C PD 136 W TC = 125 °C 45 Operating Junction and Storage Temperature Range TJ, Tstg -55 to +175 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB mount c RthJA 50 °C/W Junction-to-Case (Drain) RthJC 1.1 |
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