© Semiconductor Components Industries, LLC, 2013

May, 2013 − Rev. 4

1

Publication Order Number:

BAS16TT1/D

BAS16TT1G

Silicon Switching Diode

Features

Compliant

Rating

Symbol

Max

Unit

Continuous Reverse Voltage

100

V

Recurrent Peak Forward Current

200

mA

Peak Forward Surge Current

Pulse Width = 10 ms

500

mA

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation,

FR−4 Board (Note 1)

Derated above 25°C

225

1.8

mW

mW/°C

Thermal Resistance,

Junction−to−Ambient (Note 1)

555

°C/W

Total Device Dissipation,

FR−4 Board (Note 2)

Derated above 25°C

360

2.9

mW

mW/°C

Thermal Resistance,

Junction−to−Ambient (Note 2)

345

°C/W

Junction and Storage

Temperature Range

−55 to

+150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−4 @ Minimum Pad

2. FR−4 @ 1.0 × 1.0 Inch Pad

http://onsemi.com

Device

Package

ORDERING INFORMATION

CASE 463

SOT−416

STYLE 2

MARKING

DIAGRAM

3

CATHODE

1

ANODE

BAS16TT1G

SOT−416

(Pb−Free)

3000 / Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

1 2

3

G

1

XX

= Specific Device Code

M

= Date Code

G

= Pb−Free Package