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MBRM110ET1G Datasheet(PDF) 1 Page - ON Semiconductor

Part # MBRM110ET1G
Description  Surface Mount Schottky Power Rectifier
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MBRM110ET1G Datasheet(HTML) 1 Page - ON Semiconductor

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 Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 3
1
Publication Order Number:
MBRM110E/D
MBRM110ET1G,
NRVBM110ET1G
Surface Mount
Schottky Power Rectifier
POWERMITE
Power Surface Mount Package
The Schottky POWERMITEemploys the Schottky Barrier
principle with a barrier metal and epitaxial construction that produces
optimal forward voltage drop−reverse current tradeoff. The advanced
packaging techniques provide for a highly efficient micro miniature,
space saving surface mount Rectifier. With its unique heatsink design,
the POWERMITEhas the same thermal performance as the SMA
while being 50% smaller in footprint area, and delivering one of the
lowest height profiles,  1.1 mm in the industry. Because of its small
size, it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are AC−DC and
DC−DC converters, reverse battery protection, and “ORing” of
multiple supply voltages and any other application where performance
and size are critical.
Features
Low IR Extends Battery Life
Low Profile − Maximum Height of 1.1 mm
Small Footprint − Footprint Area of 8.45 mm2
150C Operating Junction Temperature
Low Thermal Resistance with Direct Thermal Path of Die on
Exposed Cathode Heat Sink
ESD Ratings:
Human Body Model = 3B (> 16 kV)
Machine Model = V (> 400 V)
AEC−Q101 Qualified and PPAP Capable
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are Pb−Free*
Mechanical Characteristics:
POWERMITEis JEDEC Registered as D0−216AA
Case: Molded Epoxy
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 16.3 mg (Approximately)
Lead and Mounting Surface Temperature for Soldering Purposes:
260C Maximum for 10 Seconds
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES, 10 VOLTS
Device
Package
Shipping
ORDERING INFORMATION
MBRM110ET1G
POWERMITE
(Pb−Free)
3,000 /
Tape & Reel
MBRM110ET3G
POWERMITE
(Pb−Free)
12,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
POWERMITE
CASE 457
PLASTIC
CATHODE
ANODE
MARKING DIAGRAM
http://onsemi.com
M
= Date Code
1E1
= Device Code
G
= Pb−Free Package
NRVBM110ET1G
POWERMITE
(Pb−Free)
3,000 /
Tape & Reel
M
1E1G
12


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