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NSVT30010MXV6T1G Datasheet(PDF) 3 Page - ON Semiconductor |
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NSVT30010MXV6T1G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 5 page NST30010MXV6T1G, NSVT30010MXV6T1G http://onsemi.com 3 TYPICAL CHARACTERISTICS −55C 25C 150C Figure 1. Collector Emitter Saturation Voltage vs. Collector Current Figure 2. Collector Emitter Saturation Voltage vs. Collector Current IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) 100 10 1.0 0.1 0 0.05 0.10 0.15 0.20 0.25 100 10 1.0 0.1 0 0.5 1.0 1.5 2.0 2.5 3.5 4.0 Figure 3. DC Current Gain vs. Collector Current Figure 4. Base Emitter Saturation Voltage vs. Collector Current IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) 100 10 1.0 0.1 0 200 400 600 800 1000 1200 1400 100 10 1.0 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 Figure 5. Base Emitter Turn−On Voltage vs. Collector Current Figure 6. Saturation Region @ 255C IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA) 100 10 1.0 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 1.0 100 10 1.0 0.1 0.01 0 0.5 1.0 1.5 2.0 2.5 3.0 IC/IB = 10 −55C 25C 150C 3.0 IC/IB = 100 −55C 25C 150C 150C (2.0 V) 150C (5.0 V) −55C (2.0 V) −55C (5.0 V) 25C (5.0 V) 25C (2.0 V) IC/IB = 10 0.7 0.8 0.9 VCE = −5.0 V −55C 25C 150C IC = 100 mA 50 mA 20 mA 10 mA |
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