NSVT30010MXV6T1G datasheet(3/5 Pages) ONSEMI

Part #	NSVT30010MXV6T1G

Description	Dual Matched General Purpose Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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NST30010MXV6T1G, NSVT30010MXV6T1G

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TYPICAL CHARACTERISTICS

−55C

25C

150C

Figure 1. Collector Emitter Saturation Voltage

vs. Collector Current

Figure 2. Collector Emitter Saturation Voltage

vs. Collector Current

IC, COLLECTOR CURRENT (mA)

100

10

1.0

0.1

0

0.05

0.10

0.15

0.20

0.25

100

10

1.0

0.1

0

0.5

1.0

1.5

2.0

2.5

3.5

4.0

Figure 3. DC Current Gain vs. Collector

Current

Figure 4. Base Emitter Saturation Voltage vs.

Collector Current

IC, COLLECTOR CURRENT (mA)

100

10

1.0

0.1

0

200

400

600

800

1000

1200

1400

100

10

1.0

0.1

0

0.2

0.4

0.6

0.8

1.0

1.2

Figure 5. Base Emitter Turn−On Voltage vs.

Collector Current

Figure 6. Saturation Region @ 255C

IC, COLLECTOR CURRENT (mA)

IB, BASE CURRENT (mA)

100

10

1.0

0.1

0

0.1

0.2

0.3

0.4

0.5

0.6

1.0

100

10

1.0

0.1

0.01

0

0.5

1.0

1.5

2.0

2.5

3.0

IC/IB = 10

−55C

25C

150C

3.0

IC/IB = 100

−55C

25C

150C

150C (2.0 V)

150C (5.0 V)

−55C (2.0 V)

−55C (5.0 V)

25C (5.0 V)

25C (2.0 V)

IC/IB = 10

0.7

0.8

0.9

VCE = −5.0 V

−55C

25C

150C

IC = 100 mA

50 mA

20 mA

10 mA

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