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BAV74LT1G Datasheet(PDF) 1 Page - ON Semiconductor |
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BAV74LT1G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 3 page © Semiconductor Components Industries, LLC, 1994 October, 2016 − Rev. 6 1 Publication Order Number: BAV74LT1/D BAV74LT1G Monolithic Dual Switching Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 50 Vdc Forward Current IF 200 mAdc Peak Forward Surge Current IFM(surge) 500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1), TA = 25°C Derate above 25 °C PD 225 1.8 mW mW/ °C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25 °C PD 300 2.4 mW mW/ °C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. SOT−23 (TO−236) CASE 318 STYLE 9 MARKING DIAGRAM 1 2 3 Device Package Shipping† ORDERING INFORMATION BAV74LT1G SOT−23 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 3 CATHODE ANODE 1 2 ANODE BAV74LT3G SOT−23 (Pb−Free) 10,000/Tape & Reel 1 JA M G G JA = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. www.onsemi.com |
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