© Semiconductor Components Industries, LLC, 1994

October, 2016 − Rev. 6

1

Publication Order Number:

BAV74LT1/D

BAV74LT1G

Monolithic Dual

Switching Diode

Features

Compliant

Rating

Symbol

Value

Unit

Reverse Voltage

50

Vdc

Forward Current

200

mAdc

Peak Forward Surge Current

500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR− 5 Board

Derate above 25

°C

225

1.8

mW

mW/

°C

Thermal Resistance, Junction−to−Ambient

556

°C/W

Total Device Dissipation Alumina

Derate above 25

°C

300

2.4

mW

mW/

°C

Thermal Resistance, Junction−to−Ambient

417

°C/W

Junction and Storage Temperature

−55 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR− 5 = 1.0

 0.75  0.062 in.

2. Alumina = 0.4

 0.3  0.024 in 99.5% alumina.

SOT−23 (TO−236)

CASE 318

STYLE 9

MARKING DIAGRAM

1

2

3

Device

Package

ORDERING INFORMATION

BAV74LT1G

SOT−23

(Pb−Free)

3000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

3

CATHODE

ANODE

1

2

ANODE

BAV74LT3G

SOT−23

(Pb−Free)

10,000/Tape & Reel

1

JA M

G

G

JA = Device Code

M = Date Code*

G = Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may vary

depending upon manufacturing location.

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