© Semiconductor Components Industries, LLC, 1994

October, 2016 − Rev. 10

1

Publication Order Number:

BAW56LT1/D

BAW56L, SBAW56L

Dual Switching Diode

Common Anode

Features

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

Compliant

Rating

Symbol

Value

Unit

Reverse Voltage

70

V

Forward Current

200

mA

Forward Surge Current

(60 Hz @ 1 cycle)

2.0

A

Non−Repetitive Peak Forward Current

t = 1

ms (Note 3)

4.0

A

Repetitive Peak Forward Current

Pulse Wave = 1 sec, Duty Cycle = 66%

500

mA

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR− 5 Board

Derate above 25

°C

225

1.8

mW

mW/

°C

Thermal Resistance,

Junction−to−Ambient

556

°C/W

Total Device Dissipation

Alumina Substrate,

Derate above 25

°C

300

2.4

mW

mW/

°C

Thermal Resistance,

Junction−to−Ambient

417

°C/W

Junction and Storage Temperature

− 55 to

+150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR− 5 = 1.0

 0.75  0.062 in.

2. Alumina = 0.4

 0.3  0.024 in. 99.5% alumina.

ANODE

3

CATHODE

1

2

CATHODE

MARKING DIAGRAM

Device

Package

ORDERING INFORMATION

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

1

A1 M

G

G

SOT−23 (TO−236)

CASE 318

STYLE 12

A1

= Device Code

M

= Date Code*

G

= Pb−Free Package

BAW56LT1G

SOT−23

(Pb−Free)

3,000 /

Tape & Reel

BAW56LT3G

SOT−23

(Pb−Free)

10,000 /

Tape & Reel

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

(Note: Microdot may be in either location)

SBAW56LT1G

SOT−23

(Pb−Free)

3,000 /

Tape & Reel

SBAW56LT3G

SOT−23

(Pb−Free)

10,000 /

Tape & Reel

www.onsemi.com