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SQ9945AE Datasheet(PDF) 2 Page - Vishay Siliconix |
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SQ9945AE Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com Document Number: 74499 2 S-81559-Rev. B, 23-Oct-08 SQ9945AEY Vishay Siliconix Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA - - - V Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.0 - 3.0 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = 60 V - - 1.0 µA VGS = 0 V VDS = 60 V - - 10 VGS = 0 V VDS = 60 V, TJ = 55 °C - - - On-State Drain Currenta ID(on) VGS = 10 V VDS ≥ 5 V 20 - - A Drain-Source On-State Resistancea RDS(on) VGS = 10 V ID = 3.7 A - 0.060 0.080 Ω VGS = 10 V ID = 30 A, TJ = 125 °C - - - VGS = 10 V ID = 30 A, TJ = 175 °C - - - Forward Transconductancea gfs VDS = 15 V, ID = 3.7 A - - 11 S Dynamicb Input Capacitance Ciss VGS = 0 V VDS = 25 V, f = 1 MHz -- - pF Output Capacitance Coss -- - Reverse Transfer Capacitance Crss -- - Total Gate Chargec Qg VGS = 10 V VDS = 30 V, ID = 3.7 A -11 20 nC Gate-Source Chargec Qgs -2 - Gate-Drain Chargec Qgd -2 - Turn-On Delay Time c td(on) VDD = 30 V, RL = 30 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω -9 20 ns Rise Timec tr -10 20 Turn-Off Delay Timec td(off) -21 40 Fall Timec tf -8 20 Source-Drain Diode Ratings and Characteristics TC = 25 °Cb Pulsed Currenta ISM -- - A Forward Voltage VSD IF = 85 A, VGS = 0 V - - - V Reverse Recovery Time trr IF = 2 A, dI/dt = 100 A/µs -45 80 ns Peak Reverse Recovery Current IRM(REC) -- - A Reverse Recovery Charge Qrr -- - µC |
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