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OP299 Datasheet(PDF) 1 Page - OPTEK Technologies |
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OP299 Datasheet(HTML) 1 Page - OPTEK Technologies |
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1 / 2 page  Features •Characterized at 5mA for battery operated systems or other low drive current systems •Wide irradiance pattern (OP294) or narrow irradiance pattern (OP299) •Significantly higher power output than GaAs at equivalent drive currents •Wavelength matched to silicon’s peak response •T-1 3/4 package Description The OP294 and OP299 are gallium arsenide infrared emitting diodes designed for low current or power limited applications (such as battery supplies). These LEDs are similar in design to the OP290 and OP295 but use a smaller chip which increases output efficiency at low current levels by increasing current density. Light output can be maximized with continuous (d.c.) forward current up to 100mA or with pulsed forward current operation up to 750 mA. The chip is mounted in an IR transmissive plastic package and has been designed and tested for use with OP593/598 phototransistors or similar photodetector. Absolute Maximum Ratings (TA = 25 o C unless otherwise noted) Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V Continuous Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA Peak Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750 mA Storage and Operating Temperature Range . . . . . . . . . . . . . . . . . . -40 o C to +100o C Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260 o C(1) Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180 mW (2) Notes: (1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. A max. of 20 grams force may be applied to the leads when soldering. (2) Derate linearly 1.80 mW/ o C above 25o C. (3) Ee(APT) is a measurement of the average apertured radiant energy incident upon a sensing area 0.250" (6.35 mm) in diameter, perpendicular to and centered on the mechanical axis of the lens, and 1.429" (36.3 mm) from the measurement surface. Ee(APT) is not necessarily uniform within the measured area. (4) Ee(APT) is a measurement of the average apertured radiant energy incident upon a sensing area 0.250" (6.35 mm) in diameter, perpendicular to and centered on the mechanical axis of the lens, and .500" (12.7 mm) from the measurement surface. Ee(APT) is not necessarily uniform within the measured area. (5) Cathode lead is 0.070" nominal shorter than anode lead. Product Bulletin OP294 June 1996 GaAlAs Plastic Infrared Emitting Diode Types OP294, OP299 Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-2396 2-56 |
Similar Part No. - OP299 |
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Similar Description - OP299 |
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