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MMSD4148T1 Datasheet(PDF) 2 Page - ON Semiconductor |
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MMSD4148T1 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 4 page MMSD4148, SMMSD4148 www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (IBR = 100 mA) V(BR) 100 − V Reverse Voltage Leakage Current (VR = 20 V) (VR = 75 V) IR − − 25 5.0 nA mA Forward Voltage (IF = 10 mA) VF − 1000 mV Diode Capacitance (VR = 0 V, f = 1.0 MHz) CD − 4.0 pF Reverse Recovery Time (IF = IR = 10 mA) (Figure 1) trr − 4.0 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. A 2.0 k W variable resistor adjusted for a Forward Current (IF) of 10 mA. 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. 3. tp » trr +10 V 2 k 820 W 0.1 mF DUT VR 100 mH 0.1 mF 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE tr tp t 10% 90% IF IR trr t iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) IF INPUT SIGNAL Figure 1. Recovery Time Equivalent Test Circuit |
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