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RB461F Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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RB461F Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 3 page Production specification Schottky Barrier Diode RB461F F025 www.gmicroelec.com Rev.A 1 FEATURES Small total capacitance. Power dissipation.(PD=150mW) APPLICATIONS For general purpose applications. ORDERING INFORMATION SOT-323 Type No. Marking Package Code RB461F 3B SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit Diode reverse voltage VR 20 V Forward continuous Current IF 700 mA Power Dissipation Pd 150 mW Junction temperature Tj 150 ℃ Storage temperature range Tstg -55 to +150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN Typ. MAX UNIT Reverse breakdown voltage V(BR)R IR=1mA 20 V Reverse current IR VR=20V 200 μA Forward voltage VF IF=700mA 0.49 V Pb Lead-free |
Similar Part No. - RB461F_14 |
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Similar Description - RB461F_14 |
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