TGA4548

17 – 20 GHz 10 W GaN Power Amplifier

Data Sheet Rev. A, November 18, 2016 | Subject to change without notice

10 of 11

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Mechanical Information

Notes:

Units: millimeters

Ground is backside of die

Bond Pad Description

Pad No.

Symbol

Pad Size (mm)

Description

1

RF IN

0.100 x 0.200

RF Input; matched to 50 Ω, DC blocked

3, 12

0.100 x 0.100

Gate voltage for stage 1, 2, & 3, bias network is required; see

Application Circuit on page 8 as an example.

4, 11

0.100 x 0.100

Drain voltage for stage 1, bias network is required; see Application

Circuit on page 8 as an example.

5, 10

0.100 x 0.100

Drain voltage for stage 2, bias network is required; see Application

Circuit on page 8 as an example.

6, 9

0.200 x 0.100

Drain voltage for stage 3, bias network is required; see Application

Circuit on page 8 as an example.

7, 8

0.100 x 0.100

Power detector and reference voltage

2

RF OUT

0.100 x 0.200

RF Output; matched to 50 Ω, DC blocked