B120-E3, B130-E3, B140-E3, B150-E3, B160-E3

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Vishay General Semiconductor

Revision: 13-Aug-13

3

Document Number: 88946

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 5 - Typical Instantaneous Forward Characteristics

Fig. 6 - Typical Instantaneous Forward Characteristics

Fig. 7 - Typical Reverse Leakage Characteristics

Fig. 8 - Typical Junction Capacitance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Instantaneous Forward Voltage (V)

10

1

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.1

0.01

T

T

T

B120, B130, B140

Instantaneous Forward Voltage (V)

10

1

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.1

0.01

T

T

T

B150, B160

100 000

10 000

1000

100

10

10

20

30

40

50

60

70

80

90

100

1

0.1

Percent of Rated Peak Reverse Voltage (%)

T

T

T

B120, B130, B140

B150, B160

0.1

1

10

100

1000

100

10

Reverse Voltage (V)

T

f = 1.0 MHz

V

B120, B130, B140

B150, B160

0.008 (0.203)

0.194 (4.93)

0.208 (5.28)

0.157 (3.99)

0.177 (4.50)

0.100 (2.54)

0.110 (2.79)

0.078 (1.98)

0.090 (2.29)

0.006 (0.152)

0.012 (0.305)

0.049 (1.25)

0.065 (1.65)

Cathode Band

0 (0)

DO-214AC (SMA)

Mounting Pad Layout

0.074 (1.88)

MAX.

0.208 (5.28)

REF.

0.066 (1.68)

MIN.

0.060 (1.52)

MIN.

0.030 (0.76)

0.060 (1.52)