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BAS40-06-HE3-18 Datasheet(PDF) 1 Page - Vishay Siliconix |
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BAS40-06-HE3-18 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 3 page BAS40-00 to BAS40-06 www.vishay.com Vishay Semiconductors Rev. 2.0, 25-Feb-13 1 Document Number: 85701 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Small Signal Schottky Diodes, Single and Dual FEATURES • These diodes feature very low turn-on voltage and fast switching • These devices are protected by a PN junction guardring against excessive voltage, such as electrostatic discharges • AEC-Q101 qualified • Base P/N-E3 - RoHS-compliant, commercial grade • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Case: SOT-23 Weight: approx. 8.8 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box Note (1) Device on fiberglass substrate, see layout on next page. Note (1) Device on fiberglass substrate, see layout on next page. 1 2 3 1 2 3 1 2 3 1 2 3 Top View Top View BAS40-05 BAS40-06 BAS40-04 BAS40-00 PARTS TABLE PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS BAS40-00 BAS40-00-E3-08 or BAS40-00-E3-18 Single diode 43 Tape and reel BAS40-00-HE3-08 or BAS40-00-HE3-18 BAS40-04 BAS40-04-E3-08 or BAS40-04-E3-18 Dual diodes serial 44 BAS40-04-HE3-08 or BAS40-04-HE3-18 BAS40-05 BAS40-05-E3-08 or BAS40-05-E3-18 Dual diodes common cathode 45 BAS40-05-HE3-08 or BAS40-05-HE3-18 BAS40-06 BAS40-06-E3-08 or BAS40-06-E3-18 Dual diodes common anode 46 BAS40-06-HE3-08 or BAS40-06-HE3-18 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage VRRM = VRWM = VR 40 V Forward continuous current (1) IF 200 mA Surge forward current (1) tp < 1 s IFSM 600 mA Power dissipation (1) Ptot 200 mW THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air (1) RthJA 500 K/W Junction temperature Tj 125 °C Storage temperature range Tstg - 65 to + 150 °C Operating temperature range Top - 55 to + 125 °C |
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