IS31AP4991A

Integrated Silicon Solution, Inc. – www.issi.com

Rev. C, 05/13/2013

5

-

0.3V ~ +6.0V

Voltage at any input pin

-

150°C

-

65°C ~ +150°C

−40°C ~ +85°C

Maximum power dissipation, SOP-8(25°C/85°C) (Note 2)

MSOP-8(25°C/85°C)

720mW/380mW

590mW/310mW

Note 1:

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings

only and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications

is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Note 2:

Thermal simulation @ 25°C /85°C ambient temperature, still air convection, 2s2p boards according to JESD51. The Pd (max by package)

is evaluated by (Tjmax-Ta)/Theta-Ja.

ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Condition

Min.

Typ.

Max.

Unit

Quiescent power supply current

3.0

mA

Shutdown current

1

μA

Shutdown voltage input high

1.4

V

Shutdown voltage input low

0.4

V

Output offset voltage

15

mV

Po

Output power (8Ω)

THD+N = 1%; f = 1kHz

1.15

W

THD+N = 10%; f = 1kHz

1.40

Wake-up time (Note 4)

100

250

ms

THD+N

Total harmonic distortion+noise

(Note 4)

Po = 0.5Wrms; f = 1kHz

0.074

%

PSRR

Power supply rejection ratio

(Note 4)

Input Grounded

f = 217Hz

56

dB

f = 1kHz

68

Symbol

Parameter

Condition

Min.

Typ.

Max.

Unit

Quiescent power supply current

2.2

mA

Shutdown current

1

μA

Po

Output power (8Ω)

THD+N = 1%; f = 1kHz

380

mW

THD+N = 10%; f = 1kHz

490

Wake-up time (Note 4)

90

200

ms

THD+N

Total harmonic distortion+noise

(Note 4)

Po = 0.3Wrms; f = 1kHz

0.076

%

Note 3:

Production testing of the device is performed at 25°C. Functional operation of the device and parameters specified over other

temperature range, are guaranteed by design, characterization and process control.

Note 4:

Guaranteed by design.