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BYG21M-HM3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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BYG21M-HM3 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page BYG21K-M3/HM3, BYG21M-M3/HM3 www.vishay.com Vishay General Semiconductor Revision: 23-Feb-16 1 Document Number: 89476 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated pellet chip junction • Low reverse current • Soft recovery characteristic • Fast reverse recovery time • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in fast switching rectification of power supply, inverters, converters, and freewheeling diodes for consumer, automotive, and telecommunication. MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end PRIMARY CHARACTERISTICS IF(AV) 1.5 A VRRM 800 V, 1000 V IFSM 30 A IR 1.0 μA VF 1.6 V trr 120 ns ER 20 mJ TJ max. 150 °C Package DO-214AC (SMA) Diode variation Single die DO-214AC (SMA) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL BYG21K BYG21M UNIT Device marking code BYG21K BYG21M Maximum repetitive peak reverse voltage VRRM 800 1000 V Average forward current IF(AV) 1.5 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 30 A Pulse energy in avalanche mode, non repetitive (inductive load switch off) I(BR)R = 1 A, TJ = 25 °C ER 20 mJ Operating junction and storage temperature range TJ, TSTG -55 to +150 °C |
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