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RBR1L60A Datasheet(PDF) 1 Page - Rohm |
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RBR1L60A Datasheet(HTML) 1 Page - Rohm |
1 / 9 page Data Sheet www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. Schottky Barrier Diode RBR1L60A lApplication lDimensions (Unit : mm) lLand Size Figure (Unit : mm) General rectification lFeatures 1) Small power mold type (PMDS) 2) High reliability 3) Low VF lStructure lConstruction lTaping Dimensions (Unit : mm) Silicon epitaxial planar type lAbsolute Maximum Ratings (T c= 25°C) Repetitive peak reverse voltage VRM V Reverse voltage VR V Operating junction temperature Tj °C Storage temperature Tstg °C lElectrical Characteristics (T j= 25°C) Symbol Min. Typ. Max. Unit VF - - 0.53 V Reverse current IR - - 75 mA Parameter 60 150 -55 to +150 VR=60V Direct reverse voltage 1 IF=1.0A Conditions non-repetitive at Ta=25ºC - - Forward voltage Symbol Limits Unit 60 Parameter Conditions Duty≦0.5 A IFSM Non-repetitive forward current surge peak 60Hz half sin wave, one cycle, 30 A Average forward rectified current Io Glass epoxy board mounted, 60Hz half sin wave, resistive load , Tc=130ºC Max. 2.6±0.15 0.1±0.02 2.0±0.2 1.5±0.2 1 2 PMDS Anode Cathode 2 ROHM : PMDS 1 : Manufacture Date JEDEC : SOD-106 2.0 4.0±0.1 2.9±0.1 4.0±0.1 2.0±0.05 φ 1.55±0.05 φ 1.55 0.3 2.8MAX f f 1/5 2015.05 - Rev.A |
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